Diodes DMN2005LPK Manual do Utilizador

Consulte online ou descarregue Manual do Utilizador para Hardware Diodes DMN2005LPK. Diodes DMN2005LPK User Manual Manual do Utilizador

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DMN2005LPK
Document number: DS30836 Rev. 9 - 2
1 of 6
www.diodes.com
June 2012
© Diodes Incorporated
DMN2005LPK
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN2005LPK-7 DM 7 8 3,000
DMN2005LPK-7B DM 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
X1-DFN1006-3
Equivalent CircuitTop View
Internal Schematic
Bottom View
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
D
S
G
ESD PROTECTED
DM = Product Type Marking Code
DM DM
DMN2005LPK-7 DMN2005LPK-7B
Top View
Bar Denotes Gate
and Source Side
Top View
Dot Denotes
Drain Side
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Página 1 - DMN2005LPK

DMN2005LPK Document number: DS30836 Rev. 9 - 2 1 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK N-CHANNEL ENHANCEMENT MODE MOSFET F

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DMN2005LPK Document number: DS30836 Rev. 9 - 2 2 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK Maximum Ratings (@TA = 25°C unles

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DMN2005LPK Document number: DS30836 Rev. 9 - 2 3 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK 00.51.01.52.0012345Fig. 1 Typica

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DMN2005LPK Document number: DS30836 Rev. 9 - 2 4 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK 00.20.40.60.81.01.2Fig. 7 Gate

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DMN2005LPK Document number: DS30836 Rev. 9 - 2 5 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK 0.00001 0.0001 0.001 0.01 0.1 1 10

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DMN2005LPK Document number: DS30836 Rev. 9 - 2 6 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LPK IMPORTANT NOTICE DIODES INCORPO

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