Diodes ZXTP2013Z Manual do Utilizador descarregar pdf (Página 2)

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ZXTP2013Z

ISSUE 1 - JUNE 2005

PARAMETER SYMBOL LIMIT UNIT

Collector-base voltage BV

CBO

-140 V

Collector-emitter voltage BV

CEO

-100 V

Emitter-base voltage BV

EBO

-7 V

Continuous collector current

(a)

-3.5 A

Peak pulse current I

-10 A

Power dissipation at T

=25°C

(a)

Linear derating factor

1.5

mW/°C

Power dissipation at T

=25°C

(b)

Linear derating factor

2.1

16.8

mW/°C

Operating and storage temperature range T

stg

-55 to 150 °C

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction to ambient

(a)

␪JA

83 °C/W

Junction to ambient

(b)

␪JA

60 °C/W

NOTES:

(a)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b)For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

THERMAL RESISTANCE

1 2 3 4 5 6

ZXTP2013Z 1

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