Diodes D55V0M1B2WS Manual do Utilizador descarregar pdf (Página 2)

D55V0M1B2WS

Document number: DS36160 Rev. 3 - 2

2 of 4

www.diodes.com

June 2013

D55

0M1B2WS

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit Conditions

Peak Pulse Power Dissipation

200 W 8/20µs, Per Figure 2

Peak Pulse Current

2 A 8/20µs, Per Figure 2

ESD Protection – Contact Discharge

ESD_Contac

±25 kV IEC 61000-4-2 Standard

ESD Protection – Air Discharge

ESD_Ai

±30 kV IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic Symbol Value Unit

Package Power Dissipation (Note 5)

250 mW

Thermal Resistance, Junction to Ambient (Note 5)

θJA

500

C/W

Operating and Storage Temperature Range

, T

STG

-65 to +150

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Conditions

Reverse Standoff Voltage

RWM

— — 55 V -

Channel Leakage Current (Note 6)

— — 100 nA

RWM

= 55V

Clamping Voltage

—

—

—

100

= 1A, t

= 8/20μS

= 2A, t

= 8/20μS

Breakdown Voltage

57 — — V

= 1mA

Channel Input Capacitance

— 14 25 pF

= 0V, f = 1MHz

Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

120 160

200

250

200

150

100

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

DISSI

(mW)

Note 5

t, TIME ( s)

Figure 2 Pulse Waveform



20 40

100

I , PEAK PULSE CURRENT (%I )

PppP

1 2 3 4

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