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DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
2 of 7
www.diodes.com
December 2009
© Diodes Incorporated
DMB54D0UDW
Electrical Characteristics - MOSFET @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
50
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
10
μA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
1.0
5.0
μA
V
GS
= ±8V, V
DS
= 0V
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS
(
th
)
0.7 0.8 1.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
3.1 4
Ω
V
GS
= 4V, I
D
= 100mA
4 5
V
GS
= 2.5V, I
D
= 80mA
Forward Transconductance
g
FS
180
mS
V
DS
= 10V, I
D
= 100mA,
f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
25
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
5
pF
Reverse Transfer Capacitance
C
rss
2.1
pF
Electrical Characteristics - PNP Transistor @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 4)
V
(
BR
)
CBO
-50 V
I
C
= 10μA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 4)
V
(
BR
)
CEO
-45 V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 4)
V
(
BR
)
EBO
-5 V
I
E
= 1μA, I
C
= 0
DC Current Gain (Note 4)
h
FE
220 290 475
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage (Note 4)
V
CE(SAT)
-100
-400
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage (Note 4)
V
BE(SAT)
-700
-900
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage (Note 4)
V
BE(ON)
-600
-750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current (Note 4)
I
CBO
-15
-4.0
nA
µA
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
Collector-Emitter Cut-Off Current (Note 4)
I
CES
-100 nA
V
CE
= -45V
Gain Bandwidth Product
f
T
100 MHz
V
CE
= -5.0V, I
C
= -10mA, f = 100MHz
Output Capacitance
C
OB
4.5 pF
V
CB
= -10V, f = 1.0MHz
Noise Figure NF 10 dB
I
C
= -0.2mA, V
CE
= -5.0Vdc,
R
S
= 2.0KΩ, f = 1.0KHz, BW = 200Hz
Notes: 4. Short duration pulse test used to minimize self-heating effect.
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