Diodes DMMT3906W Manual do Utilizador descarregar pdf (Página 3)

DMMT3906W

Document number: DS30312 Rev. 12 - 2

3 of 6

www.diodes.com

May 2014

DMMT3906W

Electrical Characteristics (@T

= +25°C unless otherwise specified)

Characteristic Symbol Min TYP Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

CBO

-40

⎯

= -100μA, I

= 0

Collector-Emitter Breakdown Voltage (Note 9)

CEO

-40

⎯

= -1.0mA, I

= 0

Emitter-Base Breakdown Voltage

EBO

-5.0

⎯

= -100μA, I

= 0

Collector Cutoff Current

CEX

⎯

-50 nA

= -30V, V

EB(OFF)

= 3.0V

Base Cutoff Current

⎯

-50 nA

= -30V, V

EB(OFF)

= 3.0V

ON CHARACTERISTICS (Note 9)

DC Current Gain

100

⎯

300

⎯

= -100µA, V

= -1.0V

= -1.0mA, V

= -1.0V

= -10mA, V

= -1.0V

= -50mA, V

= - 1.0V

= -100mA, V

= -1.0V

Collector-Emitter Saturation Voltage

CE(SAT)

⎯

-250

-400

= -10mA, I

= -1.0mA

= -50mA, I

= -5.0mA

Base-Emitter Saturation Voltage

BE(SAT)

0.65

⎯

-850

-950

= -10mA, I

= -1.0mA

= -50mA, I

= -5.0mA

MATCHING CHARACTERISTICS

DC Current Gain Matching (Note 10) h

FE1

/ h

FE2

⎯

1 2 %

= -2mA, V

= -5V

Base-Emitter Voltage Matching (Note 11)

BE1

BE2

⎯

1 2 mV

= -2mA, V

= -5V

Collector-Emitter Saturation Voltage (Note 10)

CE(SAT)1

CE(SAT)2

⎯

1 2 %

= -10mA, I

= -1.0mA

Base-Emitter Saturation Voltage (Note 10)

BE(SAT)1

BE(SAT)2

⎯

1 2 %

= -10mA, I

= -1.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

obo

⎯

4.5 pF

= -5.0V, f = 1.0MHz, I

= 0

Input Capacitance

ibo

⎯

10.0 pF

= -0.5V, f = 1.0MHz, I

= 0

Input Impedance

2.0

⎯

kΩ

= 10V, I

= 1.0mA,

f = 1.0kHz

Voltage Feedback Ratio

0.1

⎯

10 x 10

-4

Small Signal Current Gain

100

⎯

400

⎯

Output Admittance

3.0

⎯

μS

Current Gain-Bandwidth Product

250

⎯ ⎯

MHz

= -20V, I

= -10mA,

f = 100MHz

Noise Figure NF

⎯ ⎯

4.0 dB

= -5.0V, I

= -100μA,

= 1.0kΩ,

f = 1.0kHz

SWITCHING CHARACTERISTICS

Delay Time

⎯

35 ns

= -3.0V, I

= -10mA,

BE(off)

= 0.5V, I

= -1.0mA

Rise Time

⎯

35 ns

Storage Time

⎯

225 ns

= -3.0V, I

= -10mA,

= I

= -1.0mA

Fall Time

⎯

75 ns

Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

10. Is the ratio of one transistor compared to the other transistor.

11. V

BE1

BE2

is the absolute difference of one transistor compared to the other transistor.

1 2 3 4 5 6

Comentários a estes Manuais

Sem comentários

Diodes DMMT3906W Manual do Utilizador Página 3

Comentários a estes Manuais

Manuais e produtos relacionados com Hardware Diodes DMMT3906W