Diodes DMN2016UTS Manual do Utilizador descarregar pdf (Página 4)

DMN2016UTS

Document number: DS31995 Rev. 1 - 2

4 of 6

www.diodes.com

December 2009

DMN2016UTS

NEW PRODUCT

100

1,000

10,000

048121620

Fig. 9 Typical Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

E (p

)

iss

oss

rss

f = 1MHz

100

1,000

10,000

100,000

0 5 10 15 20 25 30

T = 25°C

T = 85°C

T = 125°C

T = 150°C

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

I, D

AIN-S

E LEAKA

(nA)

DSS

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Fig. 11 Transient Thermal Response

t , PULSE DURATION TIME (s)

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

R (t) = r(t) *

R = 136°C/W

P(pk)

0.001

0.01

0.1

r(t),

ANSIEN

MAL

ESIS

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

Ordering Information (Note 7)

Part Number Case Packaging

DMN2016UTS-13 TSSOP-8L 2500 / Tape & Reel

Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Top View

Logo

Part no

Year: “09” = 2009

Xth week: 01~52

N2016U

YY WW

1 2 3 4 5 6

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