Diodes DMN601TK Manual do Utilizador descarregar pdf

DMN601TK

Document number: DS30654 Rev. 5 - 2

1 of 4

www.diodes.com

March 2009

DMN601T

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Low On-Resistance: R

DS(ON)

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• ESD Protected Up To 2kV

• "Green" Device (Note 4)

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.002 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

60 V

Gate-Source Voltage

GSS

±20 V

Drain Current (Note 1)

Continuous

Pulsed (Note 3)

300

800

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)

150 mW

Thermal Resistance, Junction to Ambient

833 °C/W

Operating and Storage Temperature Range

, T

STG

-65 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

DSS

⎯ ⎯

= 0V, I

= 10μA

Zero Gate Voltage Drain Current

DSS

⎯ ⎯

1.0

μA

= 60V, V

= 0V

Gate-Source Leakage

GSS

⎯ ⎯

±10

μA

= ±20V, V

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

(

)

1.0 1.6 2.5 V

= 10V, I

= 1mA

Static Drain-Source On-Resistance

DS (ON)

⎯

2.0

3.0

= 10V, I

= 0.5A

= 5V, I

= 0.05A

Forward Transfer Admittance

⎯ ⎯

=10V, I

= 0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance

iss

⎯ ⎯

50 pF

= 25V, V

= 0V

f = 1.0MHz

Output Capacitance

oss

⎯ ⎯

25 pF

Reverse Transfer Capacitance

rss

⎯ ⎯

5.0 pF

Notes: 1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%

4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

SOT-523

TOP VIEW

Pin Out Configuration

ESD Protected up to 2kV

Source

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

Drain

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Página 1 - DMN601TK

DMN601TK Document number: DS30654 Rev. 5 - 2 1 of 4 www.diodes.com March 2009© Diodes Incorporated DMN601TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

Página 2 - V , GATE-SOURCE VOLTAGE (V)

DMN601TK Document number: DS30654 Rev. 5 - 2 2 of 4 www.diodes.com March 2009© Diodes Incorporated DMN601TK 00.20.40.60.81.001 23 45V , DRAIN-SOU

Página 3 - I , REVERSE DRAIN CURRENT (A)

DMN601TK Document number: DS30654 Rev. 5 - 2 3 of 4 www.diodes.com March 2009© Diodes Incorporated DMN601TK 0T , CHANNEL TEMPERATURE ( C)Fig. 7

Página 4

DMN601TK Document number: DS30654 Rev. 5 - 2 4 of 4 www.diodes.com March 2009© Diodes Incorporated DMN601TK Package Outline Dimensions

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