
DMN6075S
Document number: DS37023 Rev. 2 - 2
4 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN6075S
ADVANCE INFORMATION
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
-50 -25 0 25 50 75 100 125 150
V = 4.5V
I= 3A
GS
D
V=V
I= 5A
GS
D
10
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
V,
A
E
ES
LD V
L
A
E (V)
GS(th)
0.5
1
1.5
2
2.5
-50 -25 0 25 50 75 100 125 150
I= 1mA
D
I= 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I, S
E
EN
(A)
S
T = 150°C
A
0
2
4
6
8
10
0 0.3 0.6 0.9 1.2 1.5
T =125°C
A
T =85°C
A
T= 25°C
A
T = -55°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
, J
N
I
N
A
A
I
AN
E (pF)
T
1
10
100
1000
10000
0 10203040
f = 1MHz
C
iss
C
oss
C
rss
Q(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
A
E
ES
LD V
L
A
E (V)
GS
0
1
2
3
4
5
6
7
8
9
10
02468101214
V = 30V
I=A
DS
D
3
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I, D
AIN
EN
(A)
D
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
0.001
0.01
0.1
1
10
100
0.1 1 10 100
R
Limited
DS(on)
T = 150°C
T = 25°C
V = 10V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board
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