
DMP3065LVT
Document number: DS36697 Rev. 2 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMP3065LVT
ADVANCE INFORMATION
0.02
0.04
0.06
0.08
0.1
-50-25 0 25 50 75100125150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 7 On-Resistance Variation with Temperature
V= -10V
I= A
GS
D
-4.9
V=5V
I= A
GS
D
-4.
-3.7
, D
AIN-S
U
E
N-
ESISTAN
E ( )
DS(on)
Ω
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50-25 0 25 50 75100125150
T , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
A
E
ES
LD V
L
A
E (V)
GS(TH)
-I = 1mA
D
-I = 250µA
D
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
-I , S
E
EN
(A)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0 5 10 15 20 25 30
, J
I
A
A
I
A
E (p
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0
2
4
6
8
10
02468101214
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
V,
A
E-S
E V
L
A
E (V)
GS
V = 15V
I = 4.9A
DS
D
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