
DSS3540M
Document number: DS31821 Rev. 2 - 2
3 of 5
www.diodes.com
January 2011
© Diodes Incorporated
DSS3540M
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-40
⎯ ⎯
V
I
C
= -100μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5)
BV
CEO
-40
⎯ ⎯
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6
⎯ ⎯
V
I
E
= -100μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯ ⎯
-100
-50
nA
μA
V
CB
= -30V, I
E
= 0
V
CB
= -30V, I
E
= 0, T
A
= 150°C
Emitter Cutoff Current
I
EBO
⎯ ⎯
-100 nA
V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
200
150
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
CE
= -2V, I
C
= -10mA
V
CE
= -2V, I
C
= -100mA
V
CE
= -2V, I
C
= -500mA
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-50
-130
-200
-350
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -200mA, I
B
= -10mA
I
C
= -500mA, I
B
= -50mA
Collector-Emitter Saturation Resistance
R
CE
sat
⎯ ⎯
700 mΩ
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage
V
BE
sat
⎯ ⎯
-1.2 V
I
C
= -500mA, I
B
= -50mA
Base-Emitter Turn On Voltage
V
BE
on
⎯ ⎯
-1.1 V
V
CE
= -2V, I
C
= -100mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ ⎯
10 pF
V
CB
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
100
⎯ ⎯
MHz
V
CE
= -5V, I
C
= -100mA, f = 100MHz
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
012345
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
-I ,
LLE
E
(A)
C
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
0
100
200
300
400
500
600
700
800
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
h, D
EN
AIN
FE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
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