
DSS9110Y
Document number: DS31678 Rev. 2 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated
DSS9110Y
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-120 V
Collector-Emitter Voltage
V
CEO
-100 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current - Continuous
I
C
-1 A
Peak Pulse Collector Current
I
CM
-3 A
Base Current – Continuous
I
B
-0.3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ T
A
= 25°C P
D
625 mW
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25°C
R
JA
200
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0
0.2
0.4
0.6
0.8
050100150200
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature
,
WE
DISSI
A
I
N (W)
D
RC/W
θ
JA
°
= 200
0.001
0.01
0.1
1
10
0.1 1 10 100 1,000
I,
LLE
E
(A)
C
V , COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Safe Operating Area
CE
Pw = 100µs
Fig. 3 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t),
ANSIEN
E
MAL
ESIS
AN
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 163°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1
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