
DUP412VP5
Document number: DS31642 Rev. 8 - 2
2 of 4
www.diodes.com
January 2011
© Diodes Incorporated
DUP412VP5
Thermal Characteristics
Characteristic Symbol Value Unit
Peak Power Dissipation, 8x20μS Waveform (Note 5)
P
k
18 W
Thermal Resistance, Junction-to-Ambient (Note 5)
R
JA
417 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Type
Number
Marking
Code
Breakdown Voltage
(Note 6)
Leakage Current
(Note 6)
Capacitance @0V Bias(pF)
(Note 7)
Capacitance @3V Bias(pF)
(Note 7)
V
BR
@ I
T
= 5mA I
RM
@ V
RM
C
T
C
T
Min (V) Nom (V) Max (V)
Max(
A)
(V) Typ Max Typ Max
DUP412VP5 V1 11.4 12 12.7 0.5 9.0 6.5 10 3.5 5
Notes: 4. Non-repetitive current pulse per Figure 2 and derate above T
A
= 25°C per Figure 1.
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. Suggested Pad Layout Document AP02001,
which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Per element, f = 1MHz, T
A
= 25°C
0 25 50 75 100 125 150 175 200
100
75
50
25
0
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
A
EAK
LSE DE
A
IN
IN %
F
PEAK POWER OR CURRENT
0
t, TIME ( s)
Fig. 2 Pulse Waveform
μ
20 40
60
100
50
0
I , PEAK PULSE CURRENT (%I )
PppP
0.0001
0.001
0.01
0.1
1
0.4 0.6 0.8 1.0 1.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 3 Typical Forward Characteristics
F
I , INS
AN
ANE
S F
WA
D
EN
(A)
F
I, INS
AN
ANE
S
EVE
SE
EN
(nA)
R
Fig. 4 Instantaneous Reverse Current
vs. Ambient Temperature
0
2
4
6
8
10
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = 9V
R
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