Diodes IMX8 Manual do Utilizador descarregar pdf (Página 1)

IMX8

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementar

y PNP Type Available (IMT4)

• Small Surface Mount Package

• Lead

Free/RoHS Compliant (Note 3)

• "Gree

n" Device, Note 4 and 5

Mechanical Data

• Case: SOT-26

• Case Material:

Molded Plastic, "Green" Molding

Compound, Note 5. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity

: Level 1 per J-STD-020C

• Terminal Conn

ections: See Diagram

• Terminals: Solderable per MI

L-STD-202, Method 208

• Lead Fr

ee Plating (Matte Tin Finish annealed over

Copper leadframe).

• Marking Informat

ion: KX8, See Page 3

• Orde

ring & Date Code Information: See Page 3

• Weight: 0.016 gr

ams (approximate)

SOT-26

Dim Min Max Typ

A 0.35 0.50 0.38

B 1.50 1.70 1.60

C 2.70 3.00 2.80

⎯ ⎯

0.95

⎯ ⎯

0.55

H 2.90 3.10 3.00

J 0.013 0.10 0.05

K 1.00 1.30 1.10

L 0.35 0.55 0.40

M 0.10 0.20 0.15

0° 8°

⎯

All Dimens ons in mm i

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

120 V

Collector-Emitter Voltage

CEO

120 V

Emitter-Base Voltage

EBO

5.0 V

Collector Current - Continuous

50 mA

Power Dissipation (Note 1)

300 mW

Thermal Resistance, Junction to Ambient (Note 1)

417

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

(BR)CBO

120

⎯ ⎯

= 50μA

Collector-Emitter Breakdown Voltage

(BR)CEO

120

⎯ ⎯

= 1.0mA

Emitter-Base Breakdown Voltage

(BR)EBO

5.0

⎯ ⎯

= 50μA

Collector Cutoff Current

CBO

⎯ ⎯

0.5

μA

= 100V

Emitter Cutoff Current

EBO

⎯ ⎯

0.5

μA

= 4.0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

180

⎯

820

⎯ I

= 2.0mA, V

= 6.0V

Collector-Emitter Saturation Voltage

CE(SAT)

⎯ ⎯

0.5 V

= 10mA, I

= 1.0mA

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

⎯

140

⎯

MHz

= 12V, I

= 2.0mA,

f = 100MHz

Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30304 Rev. 8 - 2 1 of 3

www

.diodes.com

IMX8

1 2 3

Resumo do Conteúdo

Página 1

IMX8 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (IMT4) • Sma

05010025 5075100 125150175200P, POWER DISSIPATION (mW)DT , AMBIENT TEMPERATURE (°C)Fig. 1, Max Power Dissipation vs. Ambient TemperatureA150200250

Página 3

Ordering Information (Note 5 & 6 ) Device Packaging Shipping IMX8-7-F SOT-26 3000/Tape & Reel Notes: 6. For packaging details,

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