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Diodes MMSTA06 Manual do Utilizador Página 1

Consulte online ou descarregue Manual do Utilizador para Hardware Diodes MMSTA06. Diodes MMSTA06 User Manual Manual do Utilizador

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MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available
(MMSTA55/MMSTA56)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• MMSTA05 Marking K1H, K1G (See Page 3)
• MMSTA06 Marking K1G (See Page 3)
• Order & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
0° 8°
All Dimensions in mm
A
M
J
L
ED
B
C
H
K
G
BE
C
E
B
C
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol MMSTA05 MMSTA06 Unit
Collector-Base Voltage
V
CBO
60 80 V
Collector-Emitter Voltage
V
CEO
60 80 V
Emitter-Base Voltage
V
EBO
4.0 V
Collector Current - Continuous (Note 1)
I
C
500 mA
Power Dissipation (Note 1)
P
d
200 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage MMSTA05
MMSTA06
V
(BR)CBO
60
80
⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage MMSTA05
MMSTA06
V
(BR)CEO
60
80
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
4.0
⎯
V
I
E
= 100μA, I
C
= 0
Collector Cutoff Current MMSTA05
MMSTA06
I
CBO
⎯
100 nA
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
Collector Cutoff Current MMSTA05
MMSTA06
I
CES
⎯
100 nA
V
CE
= 60V, I
BO
= 0V
V
CE
= 80V, I
BO
= 0V
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
100
⎯ ⎯
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.25 V
I
C
= 100mA, I
B
= 10mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
1.2 V
I
C
= 100mA, V
CE
= 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
100
⎯
MHz
V
CE
= 2.0V, I
C
= 10mA, f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30168 Rev. 9 - 2 1 of 3
www.diodes.com
MMSTA05/MMSTA06
© Diodes Incorporated
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Resumo do Conteúdo

Página 1 - MMSTA05/MMSTA06

MMSTA05/MMSTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMSTA5

Página 2

05025 5075 100 125150175200P, POWER DISSIPATION (mW)DT , AMBIENT TEMPERATURE (°C)Fig. 1, Max Power Dissipation vs. Ambient TemperatureA1001502000

Página 3 - © Diodes Incorporated

1101,000100110f, GAIN BANDWIDTH PRODUCT (MHz)TI , COLLECTOR CURRENT (mA)Fig. 7, Gain Bandwidth Product vs Collector CurrentC Ordering Informatio

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