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ZXMN10A11G

Document Number DS32056 Rev. 6 - 2

4 of 8

www.diodes.com

January 2010

Product Line o

Diodes Incorporated

ZXMN10A11G

ADVANCE INFORMATION

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

DSS

100

⎯ ⎯

= 250μA, V

= 0V

Zero Gate Voltage Drain Current

DSS

⎯ ⎯

μA

= 100V, V

= 0V

Gate-Source Leakage

GSS

⎯ ⎯

±100

= ±20V, V

= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

GS(th)

2.0

⎯

4.0 V

= 250μA, V

= V

Static Drain-Source On-Resistance (Note 5)

DS (ON)

⎯ ⎯

0.35

Ω

= 10V, I

= 2.6A

0.45

= 6V, I

= 1.3A

Forward Transconductance (Notes 5 & 6)

⎯

= 15V, I

= 2.6A

Diode Forward Voltage (Note 5)

⎯

0.85 0.95 V

= 1.85A, V

= 0V

Reverse recovery time (Note 6)

⎯

= 1.0A, di/dt = 100A/μs

Reverse recovery charge (Note 6)

⎯

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

iss

⎯

274

⎯

= 50V, V

= 0V

f = 1MHz

Output Capacitance

oss

⎯

Reverse Transfer Capacitance

rss

⎯

Total Gate Charge (Note 7)

⎯

3.5

⎯

= 6.0V

= 50V

= 2.5A

Total Gate Charge (Note 7)

⎯

5.4

⎯

= 10V

Gate-Source Charge (Note 7)

⎯

1.4

⎯

Gate-Drain Charge (Note 7)

⎯

1.5

⎯

Turn-On Delay Time (Note 7)

D(on)

⎯

2.7

⎯

= 50V, V

= 10V

= 1A, R

≅ 6.0Ω

Turn-On Rise Time (Note 7)

⎯

1.7

⎯

Turn-Off Delay Time (Note 7)

D(off)

⎯

7.4

⎯

Turn-Off Fall Time (Note 7)

⎯

3.5

⎯

Notes: 5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

6. For design aid only, not subject to production testing.

7. Switching characteristics are independent of operating junction temperatures.

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