Diodes ZXMN4A06K Manual do Utilizador

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Issue 1 - March 2006 1 www.zetex.com
© Zetex Semiconductors plc 2005
ZXMN4A06K
40V N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
= -40V; R
DS(ON)
= 0.05; I
D
= 10.9A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
DPAK package
Applications
•DC - DC converters
Audio output stages
Relay and solenoid driving
Motor control
Ordering information
Device marking
ZXMN
4A06
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN4A06KTC 13 16 2,500
D
S
G
Pinout - Top view
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Resumo do Conteúdo

Página 1 - ZXMN4A06K

Issue 1 - March 2006 1 www.zetex.com© Zetex Semiconductors plc 2005ZXMN4A06K40V N-channel enhancement mode MOSFETSummaryV(BR)DSS= -40V; RDS(ON) = 0.05

Página 2

ZXMN4A06KIssue 1 - March 2006 2 www.zetex.com© Zetex Semiconductors plc 2005Absolute maximum ratingsNOTES:(a) For a device surface mounted on 50mm x 5

Página 3

ZXMN4A06KIssue 1 - March 2006 3 www.zetex.com© Zetex Semiconductors plc 2005Characteristics

Página 4

ZXMN4A06KIssue 1 - March 2006 4 www.zetex.com© Zetex Semiconductors plc 2005Electrical characteristics (at TA = 25°C unless otherwise stated)Parameter

Página 5

ZXMN4A06KIssue 1 - March 2006 5 www.zetex.com© Zetex Semiconductors plc 2005Typical charactersitics

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ZXMN4A06KIssue 1 - March 2006 6 www.zetex.com© Zetex Semiconductors plc 2005Typical characteristicsCurrentregulatorChargeGate charge test circuitSwitc

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ZXMN4A06KIssue 1 - March 2006 7 www.zetex.com© Zetex Semiconductors plc 2005Intentionally left blank

Página 8

ZXMN4A06KIssue 1 - March 2006 8 www.zetex.com© Zetex Semiconductors plc 2005For international sales offices visit www.zetex.com/officesZetex products

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