Diodes ZXMN6A11G Manual do Utilizador descarregar pdf (Página 4)

ZXMN6A11G

Document number: DS33556 Rev. 5 - 2

4 of 8

www.diodes.com

October 2010

ZXMN6A11G

Product Line o

Diodes Incorporated

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

DSS

⎯ ⎯

= 250μA, V

= 0V

Zero Gate Voltage Drain Current

DSS

⎯ ⎯

1.0

μA

= 60V, V

= 0V

Gate-Source Leakage

GSS

⎯ ⎯

±100

= ±20V, V

= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

(

)

1.0

⎯

3.0 V

= 250μA, V

= V

Static Drain-Source On-Resistance (Note 6)

DS (ON)

⎯

0.105 0.120



= 10V, I

= 2.5A

⎯

0.150 0.180

= 4.5V, I

= 2A

Forward Transconductance (Notes 6 & 7)

⎯

4.9

⎯

= 15V, I

= 2.5A

Diode Forward Voltage (Note 6)

⎯

0.85 0.95 V

= 2.8A, V

= 0V, T

= 25°C

Reverse Recovery Time (Note 7)

⎯

21.5

⎯

= 2.8A, di/dt = 100A/μs

= 25°C

Reverse Recovery Charge (Note 7)

⎯

20.5

⎯

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

iss

⎯

330

⎯

= 40V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

⎯

35.2

⎯

Reverse Transfer Capacitance

rss

⎯

17.1

⎯

Gate Charge (Note 8)

⎯

3.0

⎯

= 4.5V

= 15V

= 2.5A

Total Gate Charge (Note 8)

⎯

5.7

⎯

= 10V

Gate-Source Charge (Note 8)

⎯

1.25

⎯

Gate-Drain Charge (Note 8)

⎯

0.86

⎯

Turn-On Delay Time (Note 8)

(

)

⎯

1.95

⎯

= 30V, I

= 2.5A,

= 6Ω, V

= 10V

Turn-On Rise Time (Note 8)

⎯

3.5

⎯

Turn-Off Delay Time (Note 8)

(

off

)

⎯

8.2

⎯

Turn-Off Fall Time (Note 8)

⎯

4.6

⎯

Notes: 6. Measured under pulsed conditions. Pulse width  300μs; duty cycle  2%.

7. For design aid only, not subject to production testing.

8. Switching characteristics are independent of operating junction temperature.

1 2 3 4 5 6 7 8

Comentários a estes Manuais

Sem comentários

Diodes ZXMN6A11G Manual do Utilizador Página 4

Comentários a estes Manuais

Manuais e produtos relacionados com Hardware Diodes ZXMN6A11G