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ZXTD4591E6

ISSUE 1 - JULY 2000

DEVICE MARKING

4591

DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS

SUMMARY

NPN: V

CEO

=60V; I

= 1A; h

=100-300

PNP: V

CEO

=-60V; I

= -1A; h

=100-300

DESCRIPTION

Complementary NPN and PNP medium power transistors packaged in the 6

lead SOT23 package.

FEATURES

•

Low Equivalent On Resistance - NPN R

CE(sat)

210mΩat 1A

- PNP R

CE(sat)

355mΩat -1A

•

Low Saturation Voltage

• h

characterised up to 2A

• I

=1A Continuous Collector Current

• SOT23-6 package

APPLICATIONS

• MOSFET gate driver

• Low Power Motor Drive

•

Low Power DC-DC Converters

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY

PER REEL

ZXTD4591E6TA 7 8mm embossed 3000 units

ZXTD4591E6TC 13 8mm embossed 10000 units

Top View

SOT23-6

4591

1 2 3 4 5 6 7

ZXTD4591E6 1

Resumo do Conteúdo

Página 1 - ZXTD4591E6

ZXTD4591E6ISSUE 1 - JULY 2000DEVICE MARKING4591DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORSSUMMARYNPN: VCEO=60V; IC= 1A; hFE=100-300PNP: VCEO=-60

Página 2

ISSUE 1 - JULY 2000ZXTD4591E6THERMAL RESISTANCEPARAMETER SYMBOL VALUE UNITJunction to Ambient (a) RθJA113 °C/WJunction to Ambient (b) RθJA73 °C/WNOTES

Página 3

ISSUE 1 - JULY 2000ZXTD4591E6PNP TRANSISTORELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CON

Página 4

ISSUE 1 - JULY 2000ZXTD4591E6NPNELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Col

Página 5

ISSUE 1 - JULY 2000ZXTD4591E6NPN TYPICAL CHARACTERISTICS5VCE(sat)-(V)10A1A10mA 100mA1mA-55 ° C+25 ° C+100 ° CIC/IB=10VCE(sat) vICIC-Collector CurrentI

Página 6

ISSUE 1 - JULY 2000ZXTD4591E6PNP TYPICAL CHARACTERISTICSVCE(sat)-(V)10A1A10mA 100mA1mA-55 °C+25 °C+100 °CIC/IB=10VCE(sat) vICIC-Collector CurrentIC-Co

Página 7

ISSUE 1 - JULY 2000ZXTD4591E6PACKAGE DIMENSIONS PAD LAYOUT DETAILS7Zetex plc.Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.Telephone: (

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