
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125
Data Sheet
12
BCD Semiconductor Manufacturing LimitedSep. 2012 Rev. 1. 5
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage
V
OUT
V
IN
=5.2V
1mA≤I
OUT
≤30mA
4.116 4.2 4.284 V
Input Voltage V
IN
6V
Maximum Output Current I
OUT(MAX)
V
IN
-V
OUT
=1V, V
OUT
=4.12V 300 360 mA
Load Regulation
V
RLOAD
V
IN
=5.2V
1mA≤I
OUT
≤300mA
13 15 mV
Line Regulation
V
RLINE
5.2V≤V
IN
≤6V
I
OUT
=30mA
115mV
Dropout Voltage
V
DROP
I
OUT
=10mA 6.5 10
mV
I
OUT
=100mA 65 100
I
OUT
=300mA 200 300
Quiescent Current
I
Q
V
IN
=5.2V, I
OUT
=0mA
60 90
μA
Standby Current
I
STD
V
IN
=5.2V
V
CE
in OFF mode
0.01 1.0
μA
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p
V
IN
=5.2V
f=100Hz 65 dB
f=1KHz 65 dB
Output Voltage
Temperature Coefficient
(ΔV
OUT
/V
OUT
)/ΔTI
OUT
=30mA
±100
ppm/
o
C
Short Current Limit I
SHORT
V
OUT
=0V 50 mA
RMS Output Noise
V
NOISE
10Hz ≤f≤100kHz
50
μVrms
CE "High" Voltage CE input voltage "High" 1.5 V
CE "Low" Voltage CE input voltage "Low" 0.4 V
Thermal Shutdown 160
o
C
Thermal Shutdown Hyster-
esis
25
o
C
(V
IN
=5.2V, T
A
=25
o
C, C
IN
=1μF, C
OUT
=1μF,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
85
o
C,
unless otherwise specified.)
AP2125-4.2 Electrical Characteristics
Electrical Characteristics (Continued)
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