
19
Sep. 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125
Data Sheet
Figure 28. Line Transient
Figure 30. Load Transient
(Conditions: I
OUT
=30mA, C
OUT
=1μF, V
IN
=2.8 to 3.8V)
Δ
V
OUT
(0.02V/Div)
V
IN
( 1 V / D i v )
AP2125-1.8
0
2.8
3.8
0.02
-0.02
4.8
(Conditions: I
OUT
=10 to 100mA, C
IN
=1μF,
V
OUT
(0.02V/Div)
I
OUT
(50mA/Div)
Time (40μs/Div)
AP2125-1.8
0
100
1.82
1.8
1.84
50
Time (40μs/Div)
C
OUT
=1μF, V
IN
=2.8 V)
Typical Performance Characteristics (Continued)
Figure 31. Load Transient
(Conditions: I
OUT
=10 to 100mA, C
IN
=1μF,
C
OUT
=1μF, V
IN
=4.3 V)
V
OUT
(0.02V/Div)
I
OUT
(50mA/Div)
Time (40μs/Div)
AP2125-3.3
0
100
3.32
3.3
3.34
50
Figure 29. Line Transient
AP2125-3.3
(Conditions: I
OUT
=30mA, C
OUT
=1μF, V
IN
=4 to 5V)
Δ
V
OUT
(0.05V/Div)
V
IN
(0.5V/Div)
0
4
4.5
0.05
-0.05
5
Time (100μs/Div)
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