Diodes DMN5L06TK Manual do Utilizador descarregar pdf (Página 2)

DMN5L06TK

Document number: DS30926 Rev. 5 - 2

2 of 6

www.diodes.com

July 2012

DMN5L06TK

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain Source Voltage

DSS

50 V

Gate-Source Voltage

GSS

±20

Drain Current (Note 5) Continuous

280 mA

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

150 mW

Thermal Resistance, Junction to Ambient

833

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

DSS

⎯ ⎯

= 0V, I

= 10µA

Zero Gate Voltage Drain Current @ T

= +25°C I

DSS

⎯ ⎯

60 nA

= 50V, V

= 0V

Gate-Body Leakage

GSS

⎯ ⎯

500

μA

= ±12V, V

= 0V

= ±10V, V

= 0V

= ±5V, V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

(

)

0.49

⎯

1.2 V

= V

, I

= 250μA

Static Drain-Source On-Resistance

DS (ON)

⎯

1.8

1.5

1.2

3.0

2.5

2.0

= 1.8V, I

= 50mA

= 2.5V, I

= 50mA

= 5.0V, I

= 50mA

On-State Drain Current

(

)

0.5 1.4

⎯

= 10V, V

= 7.5V

Forward Transconductance

200

⎯ ⎯

=10V, I

= 0.2A

Source-Drain Diode Forward Voltage

0.5

⎯

1.4 V

= 0V, I

= 115mA

DYNAMIC CHARACTERISTICS

Input Capacitance

iss

⎯ ⎯

50 pF

= 25V, V

= 0V

f = 1.0MHz

Output Capacitance

oss

⎯ ⎯

25 pF

Reverse Transfer Capacitance

rss

⎯ ⎯

5.0 pF

Notes: 5. Device mounted on FR-4 PCB.

6. Short duration pulse test used to minimize self-heating effect.

1 2 3 4 5 6

DMN5L06TK 1

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