Diodes DMC3025LSD Manual do Utilizador descarregar pdf (Página 3)

DMC3025LSD

Document number: DS35717 Rev. 5 - 2

3 of 9

www.diodes.com

August 2012

DMC3025LSD

ADVANCED INFORMATION

Electrical Characteristics N-CHANNEL (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

30 — — V

= 0V, I

= 250A

Zero Gate Voltage Drain Current

DSS

— — 1 A

= 30V, V

= 0V

Gate-Source Leakage

GSS

— — ±1 A

= ±20V, V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

(

)

1.0 — 2.0 V

= V

, I

= 250A

Static Drain-Source On-Resistance

DS (ON)

— 15 20

mΩ

= 10V, I

= 7.4A

— 23 32

= 4.5V, I

= 6A

Forward Transfer Admittance

— 8 — S

= 5V, I

= 10A

Diode Forward Voltage

— 0.70 1.2 V

= 0V, I

= 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

iss

— 501 —

= 15V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

— 72 —

Reverse Transfer Capacitance

rss

— 57 —

Gate resistance

— 1.84 —

= 0V, V

= 0V, f = 1.0MHz

Total Gate Charge (V

= 4.5V) Q

— 4.6 —

= 15V, I

= 10A

Total Gate Charge (V

= 10V) Q

— 9.8 —

Gate-Source Charge

— 1.6 —

Gate-Drain Charge

— 2.0 —

Turn-On Delay Time

(

)

— 3.9 —

= 15V, V

= 10V,

= 6, I

= 1A

Turn-On Rise Time

— 4.2 —

Turn-Off Delay Time

(

off

)

— 16.6 —

Turn-Off Fall Time

— 5.8 —

Reverse Recovery Time

— 5.5 — ns

= 12A, di/dt = 500A/s

Reverse Recovery Charge

— 2.6 — nC

Electrical Characteristics P-CHANNEL (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

-30 — — V

= 0V, I

= -250A

Zero Gate Voltage Drain Current

DSS

— — -1 A

= -30V, V

= 0V

Gate-Source Leakage

GSS

— — ±100 nA

= ±20V, V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

(

)

-1.0 — -2.0 V

= V

, I

= -250A

Static Drain-Source On-Resistance

DS (ON)

— 38 45

mΩ

= -10V, I

= -5.2A

— 65 85

= -4.5V, I

= -4A

Forward Transfer Admittance

— 5 — S

= -5V, I

= -5.2A

Diode Forward Voltage

— -0.7 -1.2 V

= 0V, I

= -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

iss

— 590 — pF

= -25V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

— 69 — pF

Reverse Transfer Capacitance

rss

— 53 — pF

Gate resistance

— 11 —

= 0V, V

= 0V, f = 1.0MHz

Total Gate Charge (V

= 4.5V) Q

— 5.1 — nC

= -15V, I

= -6A

Total Gate Charge (V

= 10V) Q

— 10.5 — nC

Gate-Source Charge

— 1.8 — nC

Gate-Drain Charge

— 1.9 — nC

Turn-On Delay Time

(

)

— 6.8 — ns

= -15V, V

= -10V,

= 6, I

= -1A

Turn-On Rise Time

— 4.9 — ns

Turn-Off Delay Time

(

off

)

— 28.4 — ns

Turn-Off Fall Time

— 12.4 — ns

Reverse Recovery Time

— 14 — ns

= 12A, di/dt = 500A/s

Reverse Recovery Charge

— 11 — nC

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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