
DMC3025LSD
Document number: DS35717 Rev. 5 - 2
7 of 9
www.diodes.com
August 2012
© Diodes Incorporated
DMC3025LSD
ADVANCED INFORMATION
0
0.02
0.04
0.06
0.08
0.10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 19. On-Resistance Variation with Temperature
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(on)
Ω
V= -10V
I= A
GS
D
-10
V=5V
I= A
GS
D
-4.
-5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 20. Gate Threshold Variation vs. Ambient Temperature
A
V,
ATE T
ES
LD V
LTA
E(V)
GS(TH)
0
4
8
12
16
20
0.4 0.6 0.8 1.0 1.2 1.4
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 21. Diode Forward Voltage vs. Current
SD
-I , S
E
E
(A)
S
10
1,000
10,000
, J
I
A
A
I
A
E (p
)
T
100
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 22. Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
024681012
Q , TOTAL GATE CHARGE (nC)
Figure 23. Gate-Charge Characteristics
g
0
2
4
6
8
10
-V ,
A
E-S
E V
L
A
E (V)
GS
R
Limited
DS(on)
DC
P = 10s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
T = 150°C
T = +25°C
J(max)
A
Single Pulse
P = 1s
W
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 24. SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I , D
AI
E
(A)
D
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