
DMC3025LSD
Document number: DS35717 Rev. 5 - 2
5 of 9
www.diodes.com
August 2012
© Diodes Incorporated
DMC3025LSD
ADVANCED INFORMATION
0.005
0.015
0.025
0.035
0.010
0.020
0.030
0.040
0
-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)
Figure 7. On-Resistance Variation with Temperature
J
°
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
V = 4.5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.0
1.0
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
A
E
ES
LD V
L
A
E (V)
GS(th)
I= 1mA
D
I= 250µA
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9. Diode Forward Voltage vs. Current
I, S
E
E
(A)
S
T= 25°C
A
0
51015202530
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10. Typical Junction Capacitance
10
100
1,000
10,000
, J
N
I
N
A
A
I
AN
E (p
)
T
C
iss
C
oss
C
rss
f = 1MHz
02 46 81012
V GATE THRESHOLD VOLTAGE (V)
GS
Q(nC)
g
, TOTAL GATE CHARGE
Figure 11. Gate Charge
V = 15V
I= A
DS
D
10
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I, D
AIN
EN
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 100ms
W
P= 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
T = 150°C
T = 25°C
J(max)
A
Single Pulse
P = 1s
W
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